High-Density Matrix-Addressable AlInGaN-Based 368-nm Microarray Light-Emitting Diodes

Mask-free photolithographic exposure using a matrix-addressable micropixellated AlInGaN ultraviolet light-emitting diode

We report the integration of a UV-curable polymer microlens array onto a matrix-addressable, 368-nm-wavelength, light-emitting diode device containing 64364 micropixel elements. The geometrical and optical parameters of the microlenses were carefully chosen to allow the highly divergent emission from each micropixel to be collimated into a narrow beam of about 8-mm diam, over a distance of more...

High-density algal photobioreactors using light-emitting diodes.

Lack of high-density algal photobioreactors (PBR) has been a limitation in exploiting the biotechnological potential of algae. Recent developments of highly efficient light-emitting diodes (LED using gallium aluminum arsenide chips) have made the development of a small LED-based PBR possible. We have calculated theoretical values of gas mass transfer requirements and light-intensity requirement...

ZnO - Based Light - Emitting Diodes

Internal Efficiency Analysis of 280 nm Light Emitting Diodes

Compact ultraviolet light sources are currently of high interest for a range of applications, including solid-state lighting, short-range communication, and bio-chemical detection. We report on the design and analysis of AlGaN-based lightemitting diodes with an emission wavelength near 280 nm. Internal device physics is investigated by threedimensional numerical simulation. The simulation incor...

AlN Õ AlGaInN superlattice light - emitting diodes at 280 nm

Ultraviolet light-emitting diodes operating at 280 nm, grown by gas source molecular-beam epitaxy with ammonia, are described. The device is composed of nand p-type superlattices of AlN~1.2 nm thick!/AlGaInN~0.5 nm thick! doped with Si and Mg, respectively. With these superlattices, and despite the high average Al content, we obtain hole concentrations of (0.7– 1.1)310 cm, with the mobility of ...